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吉林化工学院学报, 2019, 36(3): 74-77     https://doi.org/10.16039/j.cnki.cn22-1249.2019.03.015
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Ho3+离子在BaTiO3陶瓷中自补偿模式探索及反常介电性质
高祥禄,路大勇
吉林化工学院 材料科学与工程研究中心
Abnormal Dielectric Properties and Exploration of Self-compensation Mode of Ho3+ in BaTiO3 Ceramics
GAO Xianglu, LU Dayong
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摘要 

采用冷压陶瓷技术制备(Ba1-xHox)(Ti1-xHox)O3(简称BHTH)陶瓷. 通过X射线衍射(XRD)、电子顺磁共振(EPR)和介电温谱技术研究了BHTH陶瓷的结构、位占据和介电性质. 结果表明:Ho3+离子在BaTiO3陶瓷中能够形成自补偿模式,且具有轻微的Ba位占据倾向. 在BHTH陶瓷中,固溶度为x = 0.03. BHTH陶瓷的介电行为表现出一个反常现象:随着x从0.01增至0.03,居里温度TC向高温移动,即TC从128℃升到131℃. BHTH晶体结构的四方度(c/a)随着x增加是TC向高温移动的主要原因.

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高祥禄
路大勇
关键词:  钬掺杂钛酸钡  X射线衍射  自补偿模式  电子顺磁共振  介电性质     
Abstract: 

(Ba1-xHox)(Ti1-xHox)O3ceramics (BHTH) were prepared using the cold-pressing ceramic technique. The structure, site occupations, and dielectric properties of BHTH were investigated using X-ray diffraction (XRD), electron paramagnetic resonance (EPR) and dielectric-temperature measuring techniques. The results indicated that Ho3+ ions in the BaTiO3 lattice could form a self-compensation mode with a slight Ba-site-occupation preference. The solubility limit was determined to be x = 0.03 in BHTH. The dielectric behavior of BHTH showed an abnormal phenomenon, i.e. that the Curie temperature (TC) shifted towards high temperatures from 128 °C at x = 0.01 to 131 °C at x = 0.03. The increase in tetragonality (c/a) of the crystal structure of BHTH is the main reason of the increase in TC.

Key words:  Ho-doped BaTiO3    X-ray diffraction    self-compensation    electron paramagnetic resonance    dielectric properties
               出版日期:  2019-03-25      发布日期:  2019-03-25      整期出版日期:  2019-03-25
ZTFLH:  O614.23  
引用本文:    
高祥禄, 路大勇. Ho3+离子在BaTiO3陶瓷中自补偿模式探索及反常介电性质 [J]. 吉林化工学院学报, 2019, 36(3): 74-77.
GAO Xianglu, LU Dayong. Abnormal Dielectric Properties and Exploration of Self-compensation Mode of Ho3+ in BaTiO3 Ceramics . Journal of Jilin Institute of Chemical Technology, 2019, 36(3): 74-77.
链接本文:  
http://xuebao.jlict.edu.cn/CN/10.16039/j.cnki.cn22-1249.2019.03.015  或          http://xuebao.jlict.edu.cn/CN/Y2019/V36/I3/74
[1] 季虑, 路大勇. (Ba1-xPrx)Ti1-x/4O3陶瓷固溶度及位占据的研究 [J]. 吉林化工学院学报, 2019, 36(3): 78-81.
[2] 梁 月, 路大勇. Tm3+离子在BaTiO3介电陶瓷中的位占据研究[J]. 吉林化工学院学报, 2018, 35(1): 44-46.
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